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SHINDENGEN
HVX-2 Series Power MOSFET
N-Channel Enhancement type
( F6F70HVX2 )
700V 6A
FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC 240V input High voltage power supply Inverter
2SK2333
OUTLINE DIMENSIONS
Case : FTO-220 (Unit : mm)
RATINGS
Absolute Maximum Ratings iTc = 25j Item Symbol Tstg Storage Temperature Tch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage Continuous Drain CurrentiDCj ID IDP Continuous Drain CurrentiPeak) IS Continuous Source CurrentiDCj PT Total Power Dissipation IAR Repetitive Avalanche Current Single Avalanche Energy EAS Repetitive Avalanche Energy EAR Vdis Dielectric Strength TOR Mounting Torque Conditions Ratings -55150 150 700 }30 6 18 6 50 6 190 19 2 0.5 Unit V A W A mJ kV Nm
Pulse width10Es, Duty cycle1/100
Tch = 150 Tch = 25 Tch = 25 Terminals to case,@AC 1 minute i Recommended torque F0.3 Nm j
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
HVX-2 Series Power MOSFET
Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Traconductance Static Drain-Source On-tate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage AEjc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions
2SK2333 ( F6F70HVX2 )
Min. 700 3. 0 2. 5 Typ. Max. 250 }0. 1 2. 0 3. 5 1. 5 2. 5 Unit V EA S V /v nC pF 110 250 ns
ID = 1mA, VGS = 0V VDS = 700V, VGS = 0V VGS = }30V, VDS = 0V ID = 3A, VDS = 10V ID = 3A, VGS = 10V ID = 1mA, VDS = 10V IS = 3A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 6A VDS = 10V, VGS = 0V, f = 1MHZ ID = 3A, RL = 50, VGS = 10V
5. 0 1. 5 3. 0 35 1250 250 530 60 160
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2333
16 Tc = -55C
Transfer Characteristics
25C
Drain Current ID [A]
12 100C 8 150C
4 VDS = 25V pulse test TYP 0 5 10 15 20
0
Gate-Source Voltage VGS [V]
2SK2333
10
Static Drain-Source On-state Resistance
Static Drain-Source On-state Resistance RDS(ON) []
ID = 3A
1
0.1
0.01
VGS = 10V pulse test TYP -50 0 50 100 150
Case Temperature Tc [C]
2SK2333
5
Gate Threshold Voltage
Gate Threshold Voltage VTH [V]
4
3
2
1 VDS = 10V ID = 1mA TYP -50 0 50 100 150
0
Case Temperature Tc [C]
2SK2333
100
Safe Operating Area
10
Drain Current ID [A]
100s 200s 1 R DS(ON) limit 1ms
10ms 0.1 DC
Tc = 25C Single Pulse 0.01 1 10 100 1000
Drain-Source Voltage VDS [V]
2SK2333
Transient Thermal Impedance
10
1
0.1
Transient Thermal Impedance jc(t) [C/W]
0.01
0.001 10-4 10-2
10-3
10-1
100
101
102
Time t [s]
2SK2333
100
Single Avalanche Energy Derating
Single Avalanche Energy Derating [%]
80
60
40
20
0
0
50
100
150
Starting Channel Temperature Tch [C]
2SK2333
10000
Capacitance
Ciss 1000
Capacitance Ciss Coss Crss [pF]
Coss 100
Crss 10
Tc=25C TYP 1 0 20 40 60 80 100
Drain-Source Voltage VDS [V]
2SK2333
Single Avalanche Current - Inductive Load
VDD = 100V VGS = 15V 0V Rg = 100 IAS = 6A
10
EAR = 19mJ
EAS = 190mJ
Single Avalanche Current IAS [A]
1
0.1 0.1 1
10
100
Inductance L [mH]
2SK2333
100
Power Derating
80
Power Derating [%]
60
40
20
0
0
50
100
150
Case Temperature Tc [C]
2SK2333
500
Gate Charge Characteristics
20
Drain-Source Voltage VDS [V]
15 VDD = 400V 300 200V 100V VGS 10
200
5 100 ID = 6A 0 0 10 20 30 40 50 0
Gate Charge Qg [nC]
Gate-Source Voltage VGS [V]
400
VDS

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